Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFH12N120P
IXFV12N120P
IXFV12N120PS
V DSS
I D25
R DS(on)
t rr
=
=
1200V
12A
1.35 Ω
300 ns
Fast Intrinsic Diode
PLUS220 (IXFV)
Symbol
Test Conditions
Maximum Ratings
G
D
S
D (TAB)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
1200
1200
± 30
V
V
V
PLUS220SMD (IXFV_S)
V GSM
I D25
Transient
T C = 25 ° C
± 40
12
V
A
G
S
D (TAB)
I DM
I A
E AS
dV/dt
P D
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
30
6
500
15
543
A
A
mJ
V/ns
W
TO-247 (IXFH)
D (TAB)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
M d
F C
Weight
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS 220)
TO-247
PLUS 220 types
300
260
1.13/10
11..65 / 2.5..14.6
6
4
° C
° C
Nm/lb.in.
N/lb.
g
g
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
BV DSS
V GS = 0V, I D = 1mA
1200
V
Applications:
V GS(th)
V DS = V GS , I D = 1mA
3.5
6.5
V
High Voltage Switched-mode and
resonant-mode power supplies
I GSS
I DSS
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
± 100 nA
25 μ A
2 mA
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
1.15
1.35
Ω
High Voltage DC-DC converters
High Voltage DC-AC inverters
? 2008 IXYS CORPORATION, All rights reserved
DS99894A (04/08)
相关PDF资料
IXFV18N60PS MOSFET N-CH 600V 18A PLUS220-SMD
IXFV22N50PS MOSFET N-CH 500V 22A PLUS220-SMD
IXFV26N50PS MOSFET N-CH 500V 26A PLUS220-SMD
IXFV30N50PS MOSFET N-CH 500V 30A PLUS220-SMD
IXFV36N50PS MOSFET N-CH 500V 36A PLUS220-SMD
IXFV74N20PS MOSFET N-CH 200V 74A PLUS220-S
IXFV96N15PS MOSFET N-CH 150V 96A PLUS220-S
IXFX120N25P MOSFET N-CH 250V 120A PLUS247
相关代理商/技术参数
IXFV12N80P 功能描述:MOSFET 12 Amps 800V 0.85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N80PS 功能描述:MOSFET 12 Amps 800V 0.85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV12N90PS 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV14N80P 功能描述:MOSFET 14 Amps 800V 0.72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV14N80PS 功能描述:MOSFET 14 Amps 800V 0.72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV15N100P 功能描述:MOSFET 15 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV15N100PS 功能描述:MOSFET 15 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube